RF1S70N06SM |
RFQ for RF1S70N06SM Required Field |
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| Product | Manufacturers | Pack | D/C |
| RF1S70N06SM | - | TO-263 | 08+ |
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49007.
Features |
| • 70A, 60V• r DS(on) = 0.014W• Temperature Compensated PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve (Single Pulse)• 175 Operating Temperature• Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" |
| UNITS | |||
| Drain-Source Voltage (Note 1) | VDSS | 60 | V |
| Drain-Gate Voltage.(RGS = 20kW) (Note 1) | VDGR | 60 | V |
| Continuous Drain Current | ID | 70 | A |
| Pulsed Drain Current (Note 3) | IDM | Refer to Peak Current Curve | |
| Gate to Source Voltage | VGS | ±20 | A |
| Single Pulse Avalanche Rating | EAS | (Refer to UIS Curve) | |
| Power Dissipation | PD | 150 | W |
| Linear Derating Factor | 1.0 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Leads at 0.063in (1.6mm) from Case for 10s. |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
